Fraunhofer IISB / 2019
Smaller, Faster, More Energy-Efficient – High-Performance Devices for the Digital Transformation
![2019-11-29_Pressefoto_FraunhoferIISB_Aluminiumnitrid-Kristall-AlN-Crystal_30x20cm-300dpi](/en/press-media/press-release/press-releases-2019/PI-191210-fraunhofer-iisb-smaller-faster-more-energy-efficient-high-performance-devices-for-the-digital-transformation/jcr:content/fixedContent/teaserimage.img.1col.jpg/1576144374552/191210-iisb-2019-11-29-Pressefoto-FraunhoferIISB-LeitBAN-Aluminiumnitrid-Kristall-AlN-Crystal-30x20cm-300dpi.jpg)
Highly efficient power semiconductors are to pave the way for a wide range of novel applications – from e-mobility to artificial intelligence. This is the objective of the recently launched joint project "power transistors based on AlN (ForMikro-LeitBAN)" coordinated by the Ferdinand-Braun-Institut.
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